FDMC4435BZ Field Programmable Gate Array 30V P Channel Power Trench

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name : ON

Model Number : FDMC4435BZ

Place of Origin : ON

MOQ : 3000

Price : Can discuss

Payment Terms : T/T

Supply Ability : 10000

Delivery Time : 5-8 working days

Packaging Details : Carton packaging

Manufacturer : onsemi

Product Category : MOSFET

Technology : Si

Mounting Style : SMD/SMT

Package / Case : Power-33-8

Transistor Polarity : P-Channel

Number of Channels : 1 Channel

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Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	Power-33-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	8.5 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	53 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.3 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	20 ns
Height:	0.8 mm
Length:	3.3 mm
Product Type:	MOSFET
Rise Time:	6 ns
Series:	FDMC4435BZ
Factory Pack Quantity	3000
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	10 ns
Width:	3.3 mm
Unit Weight:	0.007055 oz

FDMC4435BZ Field Programmable Gate Array