IRFB4227PBF 200V 65A MOSFET Transistor N Channel High Current Triode

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name : IR

Model Number : IRFB4227PBF

Place of Origin : IR

MOQ : 1

Price : Can discuss

Payment Terms : T/T

Supply Ability : 3000

Packaging Details : The cartons

Manufacturer : Infineon

Product Category : MOSFET

Technology : Si

Mounting Style : Through Hole

Package / Case : TO-220-3

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 200 V

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Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	330 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon / IR
Configuration:	Single
Fall Time:	31 ns
Forward Transconductance - Min:	49 S
Height:	15.65 mm
Length:	10 mm
Product Type:	MOSFET
Rise Time:	20 ns
	1000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	33 ns
Width:	4.4 mm
Part # Aliases:	IRFB4227PBF SP001565892
Unit Weight:	0.068784 oz

200V 65A MOSFET Transistor